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本文介绍10—12MeV高能电子对MOS样品及已封装硅二、三极管辐射效应的实验研究结果。分析了高能电子辐射效应的特点及其实用意义。
This article describes the experimental results of 10-12MeV high-energy electron on the MOS samples and packaged silicon two, transistor radiation effects. The characteristics of high-energy electron radiation effect and its practical significance are analyzed.