论文部分内容阅读
本文对用液相外延技术制作半导体激光器时所遇到的非平面ＩｎＰ固－液相界及在不同平面上满足不同的界面反应速度情况做了严格的理论分析，它可以对实际非平面ＩｎＰ生长所遇到的各种情况给出准确的解释．此外，对理论结果进行了数值模拟计算，对界面反应速度作适当拟合之后，得到了与实验一致的结果，从而验证了理论的正确性，可以其作为实际非平面ＩｎＰ液相外延生长时工艺设计与参数选择的依据．
In this paper, we do a rigorous theoretical analysis of the non-planar InP solid-liquid interface encountered in the fabrication of semiconductor lasers by liquid-phase epitaxy and the different interface reaction velocities in different planes, which can be applied to the actual nonplanar InP growth All the situations encountered give an accurate explanation. In addition, the theoretical results were calculated by numerical simulation. After fitting the interface reaction rate properly, the experimental results were consistent with the experimental results, which verified the correctness of the theory and could be used as the actual non-planar InP liquid phase epitaxial growth process Design and parameter selection basis.