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——外延生长p—型和n—型硅的寿命以及在此外延层上制作的二极管的伏—安特性做为各种生长温度、不同掺杂基片和掺杂浓度的函数被测量。该外延层采用四氯化硅氢气还原法生长。发现在1100℃生长的外延硅比高于此温度生长的外延层具有高得多的寿命(达200微秒)和较高的击穿电压。而且,在重磷掺杂基片上生长的外延层比掺锑或轻掺磷衬底上生长的外延层具有更好的特性。在外延生长前螯合处理基片具有减少散射和增加寿命的效果。用P_2O_5吸收处理对二极管特性的影响比对寿命的影响小得多。
- The lifetime of epitaxially grown p-type and n-type silicon and the volt-ampere characteristics of the diodes fabricated on this epitaxial layer are measured as a function of various growth temperatures, different doped substrates and doping concentrations. The epitaxial layer using silicon tetrachloride hydrogen reduction growth. Epitaxial silicon grown at 1100 ° C was found to have a much higher lifetime (up to 200 microseconds) and higher breakdown voltage than the epitaxial layer grown above this temperature. Moreover, epitaxial layers grown on heavily doped phosphorus substrates exhibit better properties than epitaxial layers grown on antimony doped or lightly doped substrates. Chelating the substrate prior to epitaxial growth has the effect of reducing scattering and increasing lifetime. The effect of P 2 O 5 absorption on the diode characteristics is much less than the effect on lifetime.