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我们报道关于用液相外延生长的In_(0.53)Ga_(0.47)As/InP异质结雪崩光电二极管中的深能级。使用导纳光谱学和静态电容-电压枝术鉴别并研究了两个电子能级。发现一个能级仅位于InP层中,是激活能∈_(1A)=0.20±0.02ev的类似受主能级,其体密度为N_(1A)≈10~(15)cm~(-3)。该陷阱密度在In_(0.53).Ga_(0.47)As/InP异质界面上急剧升高到该区域内的背景载流子浓度的10倍左右。由于能带之间的排斥,在低温下陷阱的填充使得在异质界面上导带不连续从△∈_(?)=0.19ev降低到0.03ev。而第二个陷阱仅呈现In_(0.53)Ga_(0.47)As特性,其激活能∈_(tB)=0.16±0.01ev,体密度在3×10~(13)cm~(-3)和8×10~(13)cm~(-3)之间。
We report on the deep level in In_ (0.53) Ga_ (0.47) As / InP heterojunction avalanche photodiodes grown by liquid-phase epitaxy. Two electron energy levels were identified and studied using admittance spectroscopy and static capacitance-voltage techniques. It is found that an energy level is only in the InP layer and is a similar acceptor energy level with activation energy ∈ 1A = 0.20 ± 0.02ev and its bulk density is N 1A ≈10 ~ 15 cm -3. . The trap density abruptly increases to about 10 times the background carrier concentration in this region at the In_ (0.53) .Ga_ (0.47) As / InP hetero interface. Due to the exclusion of bands, the filling of the traps at low temperatures reduced the discontinuity of the conduction band from △ ∈ _ (?) = 0.19ev to 0.03ev at the heterogeneous interface. While the second trap shows only In_ (0.53) Ga_ (0.47) As with an activation energy ∈ tB = 0.16 ± 0.01ev and a body density of 3 × 10 ~ (13) cm ~ (-3) × 10 ~ (13) cm ~ (-3) between.