论文部分内容阅读
纳米带是继纳米线、纳米管之后 ,最新报道的又一种准一维纳米结构。文中介绍了 Ga2 O3纳米带制备的新方法。这种方法与首次报道的纳米带的生长方法有很大不同。用扫描电子显微镜和透射电子显微镜对产物形貌进行了分析 ,纳米带宽约 5 0 0 nm,厚度约 1 0 nm,宽度 /厚度比大于 2 0。选区电子衍射 (SAED)分析表明 ,产物是纯净的 Ga2 O3单晶。实验还发现了一些特殊形态的纳米结构 ,如纳米片等 ,证明了纳米带是一种常见并稳定存在的形态。最后 ,根据实验现象对纳米带的生长机制进行了初步的分析与讨论。
Nanobelts is the next report of a quasi-one-dimensional nanostructures following nanowires and nanotubes. In this paper, a new method of preparing Ga 2 O 3 nanoribbons is introduced. This method is very different from the first report of the growth of nanoribbons. The morphology of the product was analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The nanobelts have a bandwidth of about 500 nm, a thickness of about 10 nm and a width / thickness ratio of greater than 20. Selected area electron diffraction (SAED) analysis showed that the product was pure Ga 2 O 3 single crystal. Experiments also found that some special forms of nanostructures, such as nanosheets, proved that nanobelts are a common and stable form. Finally, based on the experimental phenomenon, the growth mechanism of nanobelts was analyzed and discussed.