论文部分内容阅读
在有限深势阱模型下,求出了考虑到电子-声子相互作用情况下量子线电子基态能、概率分布和禁带宽度,以HgS/CdS量子线为例,研究了电子-声子相互作用对它们的影响.结果表明:电子-声子相互作用会降低电子基态能,在对基态能的影响中以电子与界面光学支声子相互作用的影响最大,而与界面声学支声子相互作用影响最小;电子-声子相互作用的影响和电子由势阱透入有限高势垒的概率以及禁带宽度均随量子导线半径R的减小而增大;电子-声子相互作用不改变禁带宽度随R的变化趋势,仅使其数值减小.
Under the finite deep potential well model, the ground state energies, probability distributions and bandgaps of quantum wires under the electron-phonon interaction are calculated. Taking the HgS / CdS quantum wires as an example, the interaction between the electron-phonon interaction The results show that the electron-phonon interaction can reduce the ground state energy, and the influence of the electron-interface interaction on the ground-state energy has the greatest influence on the ground state energy. However, The influence of the electron-phonon interaction and the probability that the electron penetrates into the finite high potential barrier from the potential well and the band gap width increase with the decrease of the quantum wire radius R. The electron-phonon interaction does not change Band gap with the trend of R, only to reduce the value.