基于碰撞离化理论研究设计了In0.53Ga0.47As/In0.52Al0.48As电子倍增超晶格结构雪崩光电二极管,使用MOCVD外延得到实验片,经过工艺流片后进行封装测试。测试结果显示,具有超晶格雪崩区的电子倍增型APD器件,其暗电流可以控制在纳安级,光电流增益达到140,证明具有超晶格雪崩区的电子倍增型雪崩光电二极管具有很好的光电探测性能。 The In0.53Ga0.47As / In0.52Al0.48As electron multiplying superlattice structure avalanche photodiode was designed based on the collision ionization theory. The MOCVD epitaxy was used to obtain the experimental piece. After the process flow sheet, the package was tested. The results show that the electron-multiplying APD device with superlattice avalanche region can control the dark current at the nanoampere and the photocurrent gain to reach 140, which proves that the electron multiplying avalanche photodiode with superlattice avalanche region has very good Photoelectric detection performance.