日本大阪的松下实验室已制成三维存贮器芯片的实验室样品。他们将两个存贮电路堆在另一个的顶上,相信在80年代末可能加叠到七或八层。这种存贮器芯片可贮存大于2千万位的信息。普通的存贮器为二维数据存贮器,由硅表面集成电路构成。在电路内有MOS晶体管,每管存贮一位信息。因此在硅片一定区域内晶体管愈多存贮器容量就愈大,也就是说电路线间隔愈小,存贮器容 Matsushita Laboratory in Osaka, Japan has made laboratory samples of three-dimensional memory chips. They piled two storage circuits on top of one another, believing they could be stacked up to seven or eight in the late 1980s. This memory chip can store more than 20 million bits of information. The common memory is a two-dimensional data memory, made up of a silicon surface integrated circuit. There are MOS transistors in the circuit, each storing one bit of information. Therefore, in a certain area of ​​the silicon transistor, the greater the capacity of the memory, which means that the smaller the circuit line spacing, memory capacity