(一)引言 随着微光和夜视技术的飞速发展,本世纪七十年代出现了高灵敏度的象增强硅靶摄象管(SIT),并立刻引起科研、军事和商业方面的注意。首先研制出的是1英寸(即光电阴极有效直径为25mm)管。在日本命名硅靶电子倍增摄象管(SEM)。在美国,则称为电子轰击硅管(EBS)或象增强硅视象管(ISV)。该管的高灵敏度与其移象区设计的优劣 (A) Introduction With the rapid development of low light and night vision technology, the highly sensitive image enhancement silicon target camera (SIT) appeared in the seventies of this century and immediately attracted scientific, military and commercial attention. First developed is 1 inch (that is, the effective cathode diameter of 25mm) tube. Named in Japan a silicon target electron multiplier tube (SEM). In the United States, it is called an electron bombardment silicon tube (EBS) or an enhancement silicon vision tube (ISV). The high sensitivity of the tube and the design of its shift image area