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本文详细地分析了LDD结构高温CMOS集成电路闩锁效应.文中提出了亚微米和深亚微米CMOS集成电路闩锁效应的模型.在该模型中,针对器件的尺寸和在芯片上分布情况,我们认为CMOS IC闩锁效应的维持电流有两种模式:大尺寸MOST的寄生双极晶体管是长基区,基区输运因子起主要作用;VLSI和ULSI中MOST的寄生双极晶体管是短基区,发射效率起主要作用.但是他们的维持电流都与温度是负指数幂关系.文章给出了这两种模式下的维持电流与温度关系,公式在25℃至300℃之间能与实验结果符合.
This paper analyzes in detail the latching effect of high temperature CMOS integrated circuits with LDD structure.The model of the latch-up effect of submicron and deep submicron CMOS integrated circuits is proposed in this paper.For the size of the device and its distribution on the chip, we It is considered that there are two modes for maintaining current in the CMOS IC latch-up effect: parasitic bipolar transistors of large size MOST are long base regions and base transport factors play a major role; parasitic bipolar transistors of MOST in VLSI and ULSI are short base regions , The emission efficiency plays a major role, but their holding current and temperature are exponentially exponential.The article gives the relationship between the holding current and the temperature in these two modes, the formula between 25 ℃ and 300 ℃ can be compared with the experimental results meets the.