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简介——采用硅栅工艺和器件沟道长度为5微米制作的硅-兰宝石互补MOS反相器已达到毫微秒的传输延迟和微微焦耳的动态功率与延迟乘积。除了开关速度快和动态功耗低以外,反相器具有低的泄漏电流,所以得到了低的静态功耗。 已制作了两种具有单个反相器性能特点的复杂的硅-兰宝石互补MOS存贮器。十种是铝栅256位全译码的静态随机存取存贮器,特征是在10伏时典型的取数时间为50毫微秒,静态功耗为每位0.4微瓦,动态功耗为每位10微瓦。在5伏工作时典型的取数时间是95毫微秒。另一种是硅栅256位动态移位寄存器,特征是10伏时可以在200兆赫时钟信号下工作,5伏时工作于75兆赫。在50兆赫和5伏时,典型的动态功耗是每位90微瓦。
Introduction - A silicon-sapphire complementary MOS inverter fabricated using a silicon gate process and a device channel length of 5 μm has reached nanosecond propagation delay and a pico-Joule dynamic power-to-delay product. In addition to fast switching speed and low dynamic power, the inverter has a low leakage current, so low static power dissipation is achieved. Two complex silicon-sapphire complementary MOS memories have been fabricated with a single inverter performance feature. Ten are aluminum raster 256-bit fully random-access memory, characterized by a typical fetch time of 50 ns at 10 V and a quiescent power of 0.4 μW per bit. The dynamic power consumption is 10 micro-watts each. A typical fetch time at 5 volts is 95 nanoseconds. The other is a 256-bit dynamic gate shift gate shift register featuring 10-volt clock signals at 200 MHz and 5-volt 75-MHz operation. At 50 MHz and 5 V, the typical dynamic power dissipation is 90 μW per bit.