论文部分内容阅读
用磁控溅射法制备了以NiFeCr和Ta分别为缓冲层的两种NiCo薄膜样品,在不同温度下对两种样品退火.结果表明:在NiCo厚度相同的情况下,以NiFeCr作为缓冲层的样品的各向异性磁致电阻(AMR)值明显高于Ta作为缓冲层的样品.X射线衍射(XRD)的结果表明,NiFeCr/NiCo薄膜的晶粒平均尺寸大于Ta/NiCo薄膜,且两种样品的磁膜/缓冲层界面存在较大差异,这可能是造成两者AMR差异的原因.此外,对样品进行温度适当的热处理可以明显改善薄膜的物理性质.
Two samples of NiCo films with NiFeCr and Ta buffer layers were prepared by magnetron sputtering and the samples were annealed at different temperatures.The results show that NiFeCr as the buffer layer under the same NiCo thickness The anisotropic magnetoresistance (AMR) of samples was significantly higher than that of Ta as a buffer layer.The results of X-ray diffraction (XRD) showed that the average grain size of NiFeCr / NiCo films was larger than that of Ta / NiCo films, There is a big difference between the magnetic / buffer interface of the sample, which may be the cause of the difference between the two AMR.In addition, the sample temperature for proper heat treatment can significantly improve the physical properties of the film.