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为改善Ni80Fe20薄膜的性能,研究不同溅射气压对薄膜微结构和各向异性磁电阻的影响。用磁控溅射方法制备Ni80Fe20薄膜,用X射线衍射和扫描电子显微镜分析其结构,用四探针方法测量其各向异性磁电阻。实验研究发现,较高的溅射气压下制备的Ni80Fe20薄膜各向异性磁电阻比较低,薄膜磁化到饱和需要的磁场也比较大。在较低的溅射气压(0.2、0.5 Pa)下制备的Ni80Fe20薄膜具有较高的各向异性磁电阻3.7%和4.2%,而且饱和磁化场低(低于1kA/m)。分析结果表明随着溅射气压的变化,Ni80Fe20薄膜的晶格常数、颗粒大小和均匀性等微结构发生变化,导致薄膜的各向异性磁电阻效应差别很大。
In order to improve the performance of Ni80Fe20 thin films, the effects of different sputtering pressures on the microstructures and anisotropic magnetoresistance of the films were investigated. The Ni80Fe20 thin films were prepared by magnetron sputtering. The structures of the films were analyzed by X-ray diffraction and scanning electron microscopy. The anisotropy of magnetoresistance was measured by four-probe method. Experimental studies have found that anisotropic magnetoresistance of Ni80Fe20 thin films prepared at higher sputtering pressures is relatively low, and the magnetic field required for magnetization of the films to saturation is also relatively large. The Ni80Fe20 films prepared at lower sputtering pressures (0.2, 0.5 Pa) have higher anisotropy resistances of 3.7% and 4.2%, and lower saturation magnetization (less than 1 kA / m). The results show that with the change of sputtering pressure, the microstructure, such as the lattice constant, particle size and homogeneity, of Ni80Fe20 films change greatly, resulting in the anisotropic magnetoresistance effect of the films vary greatly.