论文部分内容阅读
用RF磁控溅射沉积的Fe-N磁性薄膜,饱和磁化强度比较高,但矫顽力太高,因而降低H_c成为Fe-N是否可以用于高密度磁记录的关键,在低功率200W下溅射沉积200um的薄膜,在250℃,12000 A/m磁场下真空热处理后,当N含量在f_A为5％～7％范围内,形成a′+a″时,μ_oMs可达2.4T,H_c<80A/m,但Fe-N磁性薄膜厚度需要达到2μm,而H_c往往因厚度增加而增加,提高溅射功率到1000W,使晶粒进一步细化,2μm厚的Fe-N磁性薄膜经250℃,12000A/m磁场下真空热处理后,当N含量在f_A为5.9％～8.5％范围内,形成a′+a″时,μ_oMs=2.2T,H_c仍可低于80A/m,可以满足针对高存储密度的GMR/感应式复合读写磁头中写入磁头的需要。
Fe-N magnetic thin films deposited by RF magnetron sputtering have higher saturation magnetization but higher coercive force, so the key to reduce H_c to Fe-N can be used for high-density magnetic recording. Under low power of 200W When the content of N is in the range of 5% ~ 7%, the μ_oMs can reach as high as 2.4T when the content of N is from 5% to 7% at 250 ℃ and 12000 A / m. <80A / m. However, the thickness of Fe-N magnetic thin film needs to be 2μm. However, H_c tends to increase due to the increase of the thickness, and the sputtering power is increased to 1000W. The grain size of the Fe-N magnetic thin film is further refined. , 12000A / m magnetic field vacuum heat treatment, when the content of f_A in the range of 5.9% ~ 8.5% f_A to form a ’+ a’, μ_oMs = 2.2T, H_c can still be lower than 80A / m, The need to write a head in a GMR / inductive hybrid read / write head with a storage density.