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集成电路的前缘技术是在低k介质材料上设计3个盖层的复杂结构,上面的盖层可以用TEOS(tetraethyl orthosilicate)四乙基原硅酸盐和/或氮化硅(SiN),下面的层可以在低k介质之上用氮碳化硅(SiCN),碳化硅(SiC),或CDO(carbon dopped oxide)直接生成。因此,对于适合铜CMP的选择性浆料,除了具备的高去除率之外,须是在去除上面盖层后能够在下面的介质层表面上终止的浆料。Rohm和Haas电子材料已经开发出能够有效地去除TaN,TEPS,SiN,CDO和/或SiCN,或这些材料的任一化合物的一系列浆料,或者是能够在TEOS、SiN、CDO、SiCN和SiC的任何一种或两种薄膜表面终止,这完全取决于这些特殊浆料的配方设计,通过一两种添加剂控制去除率达到要求。系列浆料中的大多数浆料研磨剂的含量较低,在低压力的情况下具有良好的去除率,为了适应多种行业的需求,高低pH值均可使用。大多数浆料是可调的,用一种或两种添加剂来控制薄膜的去除率。描述和讨论了这些浆料的改良原理。
The leading edge technology of the integrated circuit is to design the complex structure of 3 capping layers on the low-k dielectric material, the upper capping layer can use TEOS (tetraethyl orthosilicate) tetraethylorthosilicate and / or silicon nitride (SiN) The underlying layer can be directly formed on low-k dielectric with silicon nitride (SiCN), silicon carbide (SiC), or CDO (carbon dopped oxide). Therefore, in addition to the high removal rates that are available for copper CMP-selective slurries, slurries that can terminate on the underlying dielectric layer surface after removal of the upper capping layer have to be removed. Rohm and Haas Electronic Materials A series of pastes that can effectively remove TaN, TEPS, SiN, CDO and / or SiCN, or any of these materials, have been developed or are available in TEOS, SiN, CDO, SiCN and SiC Of any one or both of the film surface termination, which is entirely dependent on the formulation of these special slurry design, with one or two additive control removal rate to meet the requirements. Most slurries in the series have a low content of slurry slurry and a good removal rate at low pressure. High and low pH values can be used to suit a wide range of industries. Most slurries are tunable, with one or two additives to control the film removal. The principle of modification of these pastes is described and discussed.