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依据 Boltzm ann方程及单壁碳纳米管 ( SWNTs)能量色散关系 ,对单个掺杂 SWNTs(金属型和半导体型 )所加偏压、掺杂浓度及管口直径影响输运电流的性质进行数值计算 .分析表明 ,掺杂 SWNs中的电流随偏压变化呈现跃变结构 ;管口直径、掺杂后 Fermi能级附近的态密度以及各通道输运电子的能力直接决定电流的特性 ,如电流强度、跃变间隔及跃变幅度 ;同时电流的特性也与温度有关
Based on the Boltzmann equation and the energy dispersion relationship of single-walled carbon nanotubes (SWNTs), the properties of the transport currents influenced by the bias voltage, doping concentration and nozzle diameter of a single doped SWNTs (metal and semiconductor) are numerically calculated The analysis shows that the current in the doped SWNs presents a transitional structure with the bias voltage. The diameter of the nozzle, the density of state near the Fermi level after doping and the ability to transport electrons in each channel directly determine the current characteristics, such as the current intensity , Transition interval and jump amplitude; at the same time the current characteristics and temperature