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报道了用溅射后退火反应法在 Ga As (110 )衬底上制备 Ga N薄膜 .XRD、XPS、TEM测量结果表明该方法制备的 Ga N是沿 c轴方向生长的六角纤锌矿结构的多晶薄膜 .PL测量结果发现了位于 36 8nm处的室温光致发光峰 .
GaN thin films were prepared on GaAs (110) substrates by sputtering post annealing reaction.The results of XRD, XPS and TEM measurements show that GaN prepared by this method is a hexagonal wurtzite structure grown along the c-axis Polycrystalline thin films. PL measurements revealed a room temperature photoluminescence peak at 368 nm.