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将磁控溅射和热丝化学气相沉积相结合,制备出超高浓度钛掺杂的氢化非晶硅薄膜。通过光发射谱(OES)分析了热丝加热前后直流溅射辉光特性,结果表明热丝加热与否对直流溅射过程的影响不大。俄歇电子能谱显示钛在薄膜中是均匀分布的,改变磁控溅射的功率可控制薄膜中钛的含量,薄膜在可见和红外光的吸收随钛浓度的增加而显著增强。掺钛非晶硅薄膜仍表现出半导体特性,电阻率随着温度的降低而提高,满足变程跳跃电导输运机制。采用激光熔融(PLM)对薄膜进行退火,薄膜晶化率达50%以上。晶化的掺钛硅薄膜仍保持较高的可见-红外波段的光吸收。
Magnetron sputtering and hot wire chemical vapor deposition combined to prepare ultra-high concentration titanium doped hydrogenated amorphous silicon film. The characteristics of DC sputtering glow before and after hot wire heating were analyzed by optical emission spectroscopy (OES). The results show that the heating of hot wire has little effect on the DC sputtering process. Auger electron spectroscopy shows that titanium is uniformly distributed in the film. The change of the power of magnetron sputtering can control the content of titanium in the film. The absorption of visible and infrared light in the film increases with the increase of titanium concentration. Titanium doped amorphous silicon films still show the characteristics of semiconductors, the resistivity increases with the decrease of temperature, to meet the range-hopping conductivity transport mechanism. The films were annealed by laser melting (PLM), the crystallization rate of the films was more than 50%. Crystallization of titanium-doped silicon film remains high visible - infrared absorption of light.