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以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在Mo基体上制备Ir薄膜。研究Ir的沉积效果与沉积温度及反应气体(O2)间的关系。Ir薄膜的沉积速率与沉积温度之间的关系不符合Arrhenius方程,沉积速率与沉积温度绝对温度的倒数呈抛物线关系,当温度为750℃时,Ir的沉积速率达到最大值,沉积温度对Ir薄膜的显微形貌有显著影响;O2的流量对薄膜的成分、形貌及结构等均有显著影响。
An iridium-acetylacetonate precursor was used to fabricate an Ir film on a Mo substrate by a metal-organic chemical vapor deposition (MOCVD) technique. The relationship between deposition effect of Ir and deposition temperature and reaction gas (O2) was studied. Ir relationship between the deposition rate and the deposition temperature does not conform to the Arrhenius equation. The deposition rate is parabolic with respect to the reciprocal of the absolute temperature of the deposition temperature. When the deposition temperature is 750 ° C, the deposition rate of Ir reaches the maximum. Of the micro-morphology has a significant impact; O2 flow on the film composition, morphology and structure have a significant impact.