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通常用各种结谱方法求得的深能级激活能实际上是在测量温度范围内的平均离化焓.本文通过对作者最近观测到的两个硅中与铜有关的深能级E_1和E_2以及硅中金受主能级的仔细分析,指出它们的离化吉布斯自由能与离化焓之间存在显著的差别,如果用离化焓来表征它们在禁带中的位置,是不精确的,特别是对于硅中与铜有关深能级E_1这种表征还会导致物理上的错误结论.强调指出对于半导体中深能级来说,离化吉布斯自由能才能确切表征各个温度下它们在禁带中的位置.
In general, the deep level activation energy obtained by various spectrometry methods is actually the average enthalpy of dissociation in the measurement temperature range.Through the analysis of the recent copper-related deep level E_1 E_2 and gold acceptor levels in silicon careful analysis, pointed out that their ionization Gibbs free energy and the enthalpy of dissociation there is a significant difference between, if the use of enthalpy to characterize their position in the forbidden band is Inaccuracies, especially for the copper-related deep level E_1 characterization in silicon, can also lead to physically erroneous conclusions, emphasizing that ionizing Gibbs free energies can accurately characterize each of the They are in the band gap at temperature.