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通过不同生长温度研究MOCVD GaAs中0.8eV电子陷阱(称为EL2)浓度与生长过程中As/Ga克分子比的关系。发现存在一个生长温度界线,把生长温度分成具有不同陷阱浓度-As/Ga克分子比关系的二个区,在630～660℃的生长温度时,陷阱浓度随Aa/Ga克分子比按1/4次方增加,而在720～740℃时,它却随As/Ga克分子比按1/2次方增加。和这种差别相对应,在较低温度和那些在较高温度生长的材料之间的激活能存在着轻微的差别。提出了根据热力学研究的一种可能解释的模型。
The relationship between the concentration of 0.8 eV electron trap (called EL2) and the molar ratio of As / Ga during the growth of MOCVD GaAs was studied by different growth temperatures. It is found that there is a growth temperature boundary, and the growth temperature is divided into two regions with different trap concentration-As / Ga molar ratio. At the growth temperature of 630-660 ℃, the trap concentration decreases with the ratio of Aa / 4th power increase, while at 720 ~ 740 ℃, but with As / Ga mole ratio by 1/2 power increase. Corresponding to this difference, there is a slight difference in activation energy between the lower temperature and those grown at a higher temperature. A possible explanation model based on thermodynamic studies is proposed.