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为解决pn结隔离器件漏电大、击穿电压低、易受温度影响等一系列因素,本文提出了取代pn结隔离的一种SOG(Silicon-on-Glass)材料,它采用钝化玻璃膜作为介质隔离,玻璃膜的厚度为几微米到几十微米。深入研究了形成SOG材料的三道关键工艺:电泳技术、键合技术、减薄技术,并对各种工艺条件进行了分析。通过对SOG材料力学和电学性能的测试,表明SOG材料强度大于180kg/cm~2,键合面积95％以上,反向漏电比pn结小4个数量级,符合制作器件的要求。
In order to solve the pn junction isolation device leakage, breakdown voltage is low, susceptible to temperature and a series of other factors, this paper proposes to replace the pn junction isolation of a SOG (Silicon-on-Glass) material, which uses a passivation glass film as Medium isolation, the thickness of the glass film is a few microns to tens of microns. In-depth study of the formation of SOG material three key processes: electrophoresis, bonding technology, thinning technology, and a variety of process conditions were analyzed. Through the testing of the mechanical and electrical properties of SOG material, it is shown that the strength of SOG material is more than 180kg / cm ~ 2, the bonding area is more than 95% and the reverse leakage current is 4 orders of magnitude smaller than the pn junction, which is in line with the requirements of fabrication devices.