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一台用于集成电路制造的等离子体浸没离子注入反应装置(PⅢ:Plasma Immersion Ion Implantation)已研制成功。用此系统,实现了惰性气体等离子体金属吸杂、用SiF_4等离子体使样品预非晶化然后用BF_3等离子体掺杂形成亚-100nmP~+/N结、沟道保角P~+掺杂以及选择性铜无电镀Pd离子活化注入。 PⅢ系统由电子回旋共振等离子体源、带晶片偏压电源的处理室、带偏压电源的溅射靶、气体处理和等离子体诊断部件组成。本文将介绍该装置及等离子体特性和反应装置的性能。
A Plasma Immersion Ion Implantation (PIII) for integrated circuit manufacturing has been developed. With this system, inert gas plasma metal gettering was achieved. The samples were pre-amorphized with SiF 4 plasma and then doped with BF 3 plasma to form sub-100 nm P ~ + / N junctions. The channel conformal P ~ + doping And selective copper electroless Pd ion activation injection. The PIII system consists of an electron cyclotron resonance plasma source, a processing chamber with a wafer bias supply, a sputtering target with a bias power supply, a gas processing and a plasma diagnostics component. This article describes the device and the plasma characteristics and the performance of the reaction device.