Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with(111) orientation via metal-organic chemical vapour deposition. The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods. Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond / Si substrates with (111) orientation via metal-organic chemical vapor deposition. The characteristics of the films were optimized through different growth methods. The comparative study of the X -ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the The Raman scattering was also performed in a back scattering configuration. The mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.