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本文从理论上分析了能带结构参数和输运机制对 1.3μm InGaAsP半导体激光器的异质势垒准平衡载流子泄漏过程的影响,及其对T_o的影响.以及最近对上述器件所作的载流子泄漏观测结果所出现的矛盾.指出准平衡泄漏过程不可能对T_o起主要作用,最近实验观测到的泄漏电流可能来自俄歇复合产生的过热载流子泄漏,而且并不与“存在CHSH过程,但对T_o起主要作用的是CHCC过程”的结论相矛盾.
In this paper, the influence of band structure parameters and transport mechanism on the heterojunction barrier quasi-equilibrium carrier leakage in a 1.3μm InGaAsP semiconductor laser and its effect on T_o are analyzed in theory. It is pointed out that it is impossible for quasi-equilibrium leakage process to play a major role in T_o. The leakage current observed experimentally in recent years may come from the overheated carrier leakage caused by Auger recombination and is not related to the existence of CHSH Process, but the main role for T_o is the CHCC process ".