论文部分内容阅读
作者用辉光放电方法,基本上按照Ovshinsky等人报道的制备a-Si:F:H合金的工艺条件制得了a-Si:F:H合金薄膜.这种材料的含氢量远比a-Si:H合金材料为低.据初步测试结果,这种材料具有良好的光电导特性和热稳定性.目前,我们正在继续完善有关工作并将做具体报道.还将报道对a-Si:F:H材料用溅射方法制备的有关结果.
The authors used a glow discharge method to prepare a-Si: F: H alloy thin films essentially in accordance with the process conditions reported by Ovshinsky et al. For preparing a-Si: F: H alloys. Si: H alloy material is low.According to preliminary test results, this material has good photoconductivity and thermal stability.At present, we are continuing to improve the work and will do specific reports.Also reported on the a-Si: F : H material prepared by sputtering the results.