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用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1 -xSbxO3(x =0 .0 5 ,0 .10 ,0 .15 ,0 .2 0 )薄膜的电子结构 .薄膜由紫外脉冲激光淀积在SrTiO3( 0 0 1)单晶衬底上 .该薄膜系列在可见光波段透明 ,透过率均超过 90 % .其导电性与掺杂浓度有关 ,当Sb掺杂浓度x =0 .0 5时 ,薄膜显示金属型导电性 .X射线光电子能谱和同步辐射光电子能谱研究结果表明 ,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级 .浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电子 ,这是SrTi0 .95Sb0 .0 5O3薄膜金属型导电性的起源 .杂质带与导带中低的电子态密度限制了跃迁概率和光吸收 .大的禁带宽度 ,小的跃迁概率和弱的光吸收 ,是该导电薄膜具有较高光学透明度的原因
X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoelectron spectroscopy (XPS) were used to investigate the effect of Sb-doped perovskite-type oxide SrTi1-xSbxO3 (x = 0.05, 0.10, 0.15, 0.2) Electronic structure.The film is deposited on the SrTiO3 (0 0 1) single crystal substrate by UV pulsed laser.The film series is transparent and the transmittance is more than 90% in the visible waveband.Its conductivity is related to the doping concentration. When Sb The results showed that the doping concentration of x = 0. 05, the film showed metal conductivity.The results of X-ray photoelectron spectroscopy and synchrotron radiation photoelectron spectroscopy showed that Sb doping introduced shallow impurity level in the forbidden band of the parent compound SrTiO3 And deep impurity levels.The degenerate localized electronization at the shallow impurity level leads to a certain amount of conduction electrons in the conduction band, which is the origin of SrTi0.95Sb0.0503 thin film metal-type conductivity. The lower electronic states density in the band limits the transition probability and light absorption, and the large bandgap, small transition probability, and weak light absorption are the reasons why the conductive film has higher optical transparency