Bioinspired Adaptive,Elastic,and Conductive Graphene Structured Thin-Films Achieving High-Efficiency

来源 :纳微快报(英文版) | 被引量 : 0次 | 上传用户:zchunhua3120
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Underwater exploration has been an attractive topic for understanding the very nature of the lakes and even deep oceans.In recent years,extensive efforts have been devoted to developing functional mate-rials and their integrated devices for underwater information capturing.However,there still remains a great challenge for water depth detection and vibration monitoring in a high-efficient,controllable,and scalable way.Inspired by the lateral line of fish that can sensitively sense the water depth and environmental stimuli,an ultrathin,elastic,and adaptive underwater sensor based on Ecoflex matrix with embedded assembled graphene sheets is fabricated.The graphene structured thin film is endowed with favour-able adaptive and morphable features,which can conformally adhere to the structural surface and transform to a bulged state driven by water pressure.Owing to the introduction of the graphene-based layer,the integrated sens-ing system can actively detect the water depth with a wide range of 0.3-1.8 m.Furthermore,similar to the fish,the mechanical stimuli from land(e.g.knocking,stomping)and water(e.g.wind blowing,raining,fishing)can also be sensitively captured in real time.This graphene structured thin-film system is expected to demonstrate significant potentials in underwater monitoring,communication,and risk avoidance.
其他文献
相比于传统VDMOS,超结耐压层结构和高k介质耐压层结构VDMOS能实现更高的击穿电压和更低的导通电阻.通过仿真软件,对3D圆柱形高k VDMOS具有、不具有界面电荷下的各种结构参数对电场分布、击穿电压和比导通电阻的影响进行了系统总结.研究和定性分析了击穿电压和比导通电阻随参数的变化趋势及其原因.对比导通电阻和击穿电压的折中关系进行了优化.该项研究对高k VDMOS的设计具有参考价值.
基于硅通孔(TSV)技术,提出了应用于三维集成电路的三维螺旋电感.在实际应用中,TSV电感存在电场、温度场和力场之间的相互耦合,最终会影响TSV电感的实际电学性能.考虑P型和N型两种硅衬底材料,采用COMSOL仿真软件,对TSV电感进行多物理场耦合研究.结果表明,在P型硅衬底情况下,多物理场耦合的影响更大,TSV电感的电感值和品质因数的变化率可达 14.13%和5.91%.
提出了一种用于降低触发电压的两级防护SCR(TSPSCR).在传统LVTSCR中植入P-ESD层,增设额外的二极管.因为P-ESD层的掺杂浓度较高,该器件能更早发生雪崩击穿而触发第一级泄流路径,从而开启第二级泄流路径.Sentaurus TCAD仿真结果表明,该器件的触发电压从传统器件的10.59 V降低至4.12 V,维持电压为1.25 V,1 V直流电压下漏电流仅为7.85 nA.优化后的TSPSCR适用于先进1 V工作电压的电路中.
在芯片紧密度、功耗都在增加的微电子封装领域,FBGA封装在同体积下有较大的存储容量.基于有限元和正交法,进行了 FBGA焊点热循环载荷下的可靠性分析,并进行了更稳健的焊点结构参数优化设计.结果表明,焊点阵列对FBGA结构热可靠性有重要影响;优化方案组合为12×12焊点阵列,焊点径向尺寸为0.42 mm,焊点高度为0.38 mm,焊点间距为0.6 mm.经过优化验证,该优化方案的等效塑性应变范围较原始设计方案降低了 89.92%,信噪比提高到17.72 dB,实现了焊点参数优化目标.
目前已有一些在ESD和电磁干扰下存储器行为的表征研究,但对静态随机存取存储器(SRAM)的连续波抗扰度的频率响应特性的研究很少.文章研究了 SRAM在射频电磁干扰下的失效行为与机理.对SRAM芯片进行射频干扰测试发现,SRAM失效行为与其工作模式相关.使用Hspice进行晶体管级仿真.结果表明,SRAM处于数据保持时,抗扰能力很强,处于读写模式时,抗扰能力较弱.进一步研究失效机理发现,电源端干扰会导致路径延时的漂移和抖动,造成SRAM读写失效.该研究可为存储器或系统级芯片的可靠性设计提供指导.
池黄(池州—黄山)高速铁路太平湖特大桥位于深水库区.从技术、经济、工期、景观等方面对桥式方案进行比选,主桥采用(48+118+228+228+118+48)m矮塔斜拉桥,具有建造较经济、造型美观、整体刚度大等优点.针对库区深水及水位变动特点和基础覆盖层薄、长联结构次内力突出等问题,对桥梁总体设计、结构体系优化、施工方案等进行研究.静力计算、抗震检算、车桥动力响应分析结果表明,各项指标均满足规范要求,结构安全可靠,有效解决了深水大跨长联结构的设计问题.
The development of multifunctional and efficient electromagnetic wave absorbing materials is a challenging research hotspot.Here,the magnetized Ni flower/MXene hybrids are successfully assembled on the surface of melamine foam(MF)through elec-trostatic se
Two-dimensional(2D)transition metal chalcogenides(TMC)and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices,particularly futuristic memristive and synaptic devices for brain-inspired neuromorp
Wearable strain sensors are arousing increasing research inter-ests in recent years on account of their potentials in motion detection,per-sonal and public healthcare,future entertainment,man-machine interaction,artificial intelligence,and so forth.Much r
Red blood cells(RBCs)have recently emerged as promosing candidates for cancer treatment in terms of relieving tumor hypoxia and inducing oxidative damage against cancer cells,but they are still far from satisfactory due to their limited oxygen transport a