论文部分内容阅读
采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si0.82Ge0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540nm,发光强度随激发功率线性变化.结果表明用循环氧化/退火方法制备的GeOI材料具有高的结晶质量,可用于Ge光电子和微电子器件.
An epitaxial layer of Si0.82Ge0.18 was grown on an SOI (Silicon On Insulator) substrate by an ultra-high vacuum chemical vapor deposition system. The Ge component was grown from 0.24 to 1 on SiGe (SGOI) .Structure and optical properties were characterized by high-resolution transmission electron microscopy, Raman scattering spectroscopy and photoluminescence spectroscopy, and the evolution of Ge composition and strain in the SiGe layer during the oxidation process was analyzed.A final 11nm A thick Ge-based insulator (GeOI) with a complete lattice structure and a flat interface.The direct photoluminescence (PL) of Ge on the insulator was observed at room temperature with the emission peak at 1540 nm and the emission intensity varying linearly with the excitation power.The results show that GeOI materials prepared by the cyclic oxidation / annealing method have high crystalline quality and can be used in Ge optoelectronic and microelectronic devices.