在稳态条件下金属 -半导体 -金属 (MSM)光探测器的光电流一维模型可以通过求解电流连续方程和传输方程来建立并求解 .在这种条件下 ,器件内部的载流子分布情况和总体光电流可以得到解析解而不用数值方法求解 .本文从电流连续方程和传输方程出发详细推导了这一过程 ,并将这一结果应用于具体的 In Ga As MSM光探测器的直流等效电路模型上 ,取得了很好的效果 Under steady-state conditions, a one-dimensional photocurrent model of a metal-semiconductor-metal (MSM) photodetector can be established and solved by solving the current continuity equation and the transmission equation. Under this condition, the carrier distribution inside the device And the total photocurrent can be analytic solution without the numerical method.This paper proceeds from the current continuous equation and the transmission equation to derive this process in detail and applies this result to the DC equivalent of a specific InGa As MSM photodetector Circuit model, and achieved good results