论文部分内容阅读
SiNx薄膜已经被广泛地应用于晶体硅太阳能电池表面作为减反和钝化膜,所以对SiNx薄膜的光学性质研究很有必要。本文采用等离子体增强化学气相沉积(PECVD)技术,在p型单晶硅(111)衬底上成功地制备了不同温度条件下的SiNx薄膜。室温下,在352 nm光源激发下,每个样品有2个发光位置,所有样品总共观测到了4处不同的发光峰位:390、471、545、570 nm,并且发现温度对390 nm处的发光峰位置无影响。由于杂质的引入在带间形成了局域化的缺陷能级,缺陷态能级和导带以及价带之间的跃迁是其主要的跃迁机制。因此,可以通过控制薄膜的生长条件来控制各个缺陷态密度,从而可以实现氮化硅薄膜在可见光范围内的可控发光。
SiNx thin films have been widely used on the surface of crystalline silicon solar cells as anti-reflection and passivation films, so the optical properties of SiNx thin films are necessary. In this paper, plasma enhanced chemical vapor deposition (PECVD) technology was used to fabricate SiNx thin films on p-type single-crystal Si (111) substrates under different temperatures. Under the excitation of 352 nm light source at room temperature, there are two luminescence sites in each sample, and a total of four different luminescence peaks were observed in all the samples: 390, 471, 545 and 570 nm, and the luminescence at 390 nm Peak position no effect. Due to the introduction of impurities, localized defect levels are formed between the bands, and the transition states between the defect states and the conduction bands and the valence bands are the main transition mechanisms. Therefore, the density of each defect state can be controlled by controlling the growth conditions of the thin film, so that the controllable light emission of the silicon nitride film in the visible light range can be realized.