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用电子能谱分析方法对低能离子束外延（IBE）生长的β－FeSi2进行了详细研究，并对其电子能谱进行了表征．实测出XPS价带谱与有关理论计算结果相符，用XPS价带谱来表征β-FeSi2比光电子峰更为清晰、可取．同时，对样品纵向分析表明界面处存在有较厚的过渡层．根据分析结果对低能IBE生长机理进行了探讨．经研究认为：Fe，Si通过空位机制进行的增强互扩散，在高温下生长出与St晶格相匹配的β－FeSi2．
The β-FeSi2 grown by low-energy ion beam epitaxy (IBE) has been studied in detail by means of electron spectroscopy, and its electronic energy spectrum has been characterized. The measured XPS valence band spectrum is in good agreement with the theoretical calculation results. It is clear and desirable to characterize the β-FeSi2 photonic peak by XPS valence band spectrum. In the meantime, longitudinal analysis of the sample shows that there is a thick transition layer at the interface. Based on the analysis results, the mechanism of IBE growth was discussed. The study shows that: Fe, Si interstitial mechanism of enhanced interdiffusion, grown at high temperature and St lattice matched β-FeSi2.