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本文用双室Ga/AsCl_3/H_2开管系统实现了各种等电子掺杂浓度的GaAs汽相外延,并首次对此进行了较为详细的动力学理论和实验研究。对少量的In在GaAs外延层中的行为及其机理进行了初步探讨,提出了等电子掺杂使位错线附近In杂质凝聚,导致外延层中位错密度减小的观点,通过等电子掺杂技术,与相同工艺条件下的普通外延层相比,其迁移率提高60％,位错密度下降1/2,杂质含量和深能级信号明显减少。以此为缓冲层,制备的Si/n~-/n/n~+多层结构GaAs材料,用于高频低噪声场效应器件,夹断干脆,饱和特性好,单位栅宽跨导提高20％。
In this paper, a variety of GaAs vapor phase epitaxy with different electron doping concentration has been realized with a two-chamber Ga / AsCl_3 / H_2 open-tube system. The kinetic theory and experimental study have been carried out for the first time. The behavior and mechanism of a small amount of In in GaAs epitaxial layer are discussed preliminarily. It is proposed that the doping density of In impurity in the vicinity of the dislocation line is reduced due to the isopotential doping, resulting in the reduction of the dislocation density in the epitaxial layer. Compared with the common epitaxial layer under the same process conditions, the miscibility technique improves the mobility by 60%, the dislocation density by 1/2, and significantly reduces the impurity content and the deep level signal. As a buffer layer, the prepared Ga / Si / n ~ - / n / n ~ + multi-layer structure GaAs material is used for high frequency and low noise field effect devices with good pinch-off and good saturation characteristics. %.