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采用射频磁控溅射法制备了Al掺杂ZnO(ZAO)薄膜,研究了真空退火对其组织结构和光电性能的影响规律。结果表明,所制备的ZAO薄膜厚度均匀、组织致密,具有(002)择优取向的六方纤锌矿结构,400℃真空退火后,薄膜晶粒粗大,(002)晶面择优取向性进一步加强。延长退火时间对薄膜的相结构、组织形貌及晶粒大小没有明显的影响。随着退火时间的增加,薄膜的电阻率呈降低趋势,退火3 h时电阻率最低,为2.25×10-3Ω.cm,但长时间退火,电阻率变化不大。薄膜样品的透光率随真空退火时间的延长先降低,后升高,再降低;样品在真空退火4 h时对可见光的平均透过率最佳,在80%以上。退火后,ZAO薄膜的吸收边发生了蓝移现象,光学禁带宽度增大。
Al-doped ZnO (ZAO) thin films were prepared by radio-frequency magnetron sputtering. The effects of vacuum annealing on the microstructure and optical properties of the films were investigated. The results show that the prepared ZAO films are uniform in thickness and compact in structure with a (002) preferred hexagonal wurtzite structure. After vacuum annealing at 400 ℃, the film grains are coarse and the preferred orientation of the (002) plane is further strengthened. Extending the annealing time has no obvious effect on the phase structure, microstructure and grain size of the films. With the increase of annealing time, the resistivity of the films decreases, and the resistivity is the lowest at 2.25 × 10-3Ω.cm after annealed for 3 h, but it does not change much after prolonged annealing. The light transmittance of the film samples decreases first, then increases and then decreases with the increase of vacuum annealing time. The average transmittance of visible light in samples annealed for 4 h is the best, more than 80%. After annealing, the absorption edge of ZAO thin film blue shift occurs, the optical band gap increases.