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氧化锌压电薄膜是一种新型的声学器件材料.为了扩大应用范围,要求薄膜有足够高的电阻率.然而,过去人们惯用的方法是在氧化锌陶瓷靶体中添加Li_2CO_3实践证明,添加Li_2CO_3的氧化锌陶瓷靶体不仅烧结温度高而且致密度低.另外,当用这种靶体溅射沉积时,获得的薄膜晶粒粗,表面粗糙,故制作的薄膜器件传输损耗大.尤其是当Li~(1+)离子吸收了空气中水份时,在薄膜的表面会产生LiOH并降低了器件的稳定性和可靠性.本报告提出用RF二极溅射装置沉积高电阻率,细晶率的添MnO_2,Cu_2Oc轴择优取向的压电薄膜.采用反射电子衍射(RED),X射线衍射(XRD)和扫描电镜照片(SEM)来研究薄膜的C轴取向和微观结构.并且用DTA,TGA.HEA等热过程曲线研究了添MnO_2,Cu_2O氧化锌陶瓷靶体对薄膜性能的影响.测量了这种薄膜的有效机电耦合系数,其值接近于氧化锌单晶.因此,为了获得高阻氧化锌压电膜,探索比Li_2CO_3更适用的添加剂不仅是必要的,而且是可能的.最后,文中对某些试验结果作了分析和讨论.
Zinc oxide piezoelectric film is a new type of acoustic device material.In order to expand the application range, the film required a high enough resistivity.However, in the past, people used the method to add Li_2CO_3 to the zinc oxide ceramic target. Practice has proved that adding Li_2CO_3 Zinc oxide ceramic target body not only has high sintering temperature and low density, but also, when the target body is sputter deposited, the obtained thin film grain is coarse and the surface is rough, so the transmission loss of the fabricated thin film device is large, especially when Li ~ (1+) ion absorbs the moisture in the air, it will generate LiOH on the surface of the film and reduce the stability and reliability of the device.The present report proposes the use of RF diode sputtering device deposition of high resistivity, fine crystal The piezoelectric films with preferred orientation of MnO_2 and Cu_2Oc films were characterized by C-axis orientation and microstructure by means of reflection electron diffraction (XRD) and scanning electron microscopy (SEM) TGA.HEA and other thermal process curves of MnO_2, Cu_2O zinc oxide ceramic target body on the film performance.Measured the effective electromechanical coupling coefficient of this film, the value close to the zinc oxide single crystal.Therefore, in order to obtain high resistance Zinc oxide piezoelectric film, Soapy Li_2CO_3 more suitable additives is not only necessary, but also possible. Finally, the paper for some test results were analyzed and discussed.