本文报道了用电调制反射光谱法测量GaA1As的能隙与组份的依赖关系,以及外延薄层和异质结界面处组份的纵向分布。利用样品在紫外区的吸收很大、透入深度较小的特点,结合阳极氧化和化学腐蚀剥层技术,测量了薄层和异质结固溶体样品组份的纵向分布。 In this paper, the dependence of the energy gap and composition of GaAlAs measured by electrical modulation reflectance spectroscopy and the longitudinal distribution of the components at the interface between the epitaxial thin layer and the heterojunction are reported. The longitudinal distribution of thin and heterojunction solid solution samples was measured by taking advantage of the large absorption in the ultraviolet region and the low penetration depth of the samples. Combined with anodic oxidation and chemical etching technique,