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研制了利用注入多晶硅扩散的一种新的掺杂方法。该方法在低噪声 npn 晶体管的制作中用于基区扩散,其特性有极显著改善。消除了脉动噪声,在10赫下噪声系数为3.5～4.0分贝。得到了极好的平坦的h_(FE)与集电极电流关系。
A new doping method using diffusion of implanted polycrystalline silicon has been developed. This method is used for base-region diffusion in the fabrication of low-noise npn transistors, and its characteristics are significantly improved. Eliminate the ripple noise, the noise figure at 10 Hz 3.5 ~ 4.0 dB. An excellent flat h_ (FE) vs. collector current relationship is obtained.