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本文分析了现有确定表面层内少子产生寿命分布方法的缺点.根据MOS电容对阶跃电压和线性扫描电压瞬态响应物理过程,导出了两个关于少子寿命纵向分布的表达式.由此提出了两种确定少于产生寿命纵向分布的新方法.对一些样品进行了测量和计算.结果表明,与瞬态电流-电容法(I-C法)相比,瞬态电容法(C-t法)测试简单、精度较高;而饱和电容法(C_(St)法)计算方便.它们均可用来确定硅中少子体产生寿命在表面层内的纵向分布.
In this paper, we analyze the shortcomings of existing methods to determine the lifetime distribution of minority carriers in surface layers. According to the transient response of MOS capacitors to step voltage and linear sweep voltage, we derive two expressions about the longitudinal distribution of minority lifetime. Two new methods to determine the longitudinal distribution less than the life expectancy were obtained. Some samples were measured and calculated. The results show that compared with the transient current-capacitance method (IC method), the transient capacitance method (Ct method) (C_ (St) method), which can be used to determine the longitudinal distribution of the lifetime of sons in silicon in the surface layer.