论文部分内容阅读
本文从理论上讨论了硅单晶生长中由于热场不对称、晶向偏离所产生的应力和提出氢缺陷的“SiO_2/Si界面”存在而产生应力的机理,近似分析计算了应力大小。指出采用对称热场、增加熔体温度梯度、增加单晶生长速度、减小晶体转速、减小温度起伏和浪涌、采用正的<111>方向生长、减小单晶中碳和氧含量、不用氢作保护气体等,可以减小这类应力,以满足超大规模集成电路的需要。
In this paper, the mechanism of stress induced by the asymmetry of thermal field, the stress induced by the deviation of crystal orientation and the existence of “SiO 2 / Si interface” in which hydrogen defects are proposed during the growth of silicon single crystal is theoretically discussed. The stress is approximated and calculated. It is pointed out that using the symmetrical thermal field, increasing the melt temperature gradient, increasing the single crystal growth rate, decreasing the crystal rotation speed, decreasing the temperature fluctuation and the surge, adopting the positive <111> direction growth to reduce the carbon and oxygen content in the single crystal, Without hydrogen as a shielding gas, etc., this type of stress can be reduced to meet the needs of very large scale integrated circuits.