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自1970年,元件制造首先采用感应耦合等离子体(ICP)刻蚀技术后,至今30多年,它的发展与集成电路和光电子器件发展密不可分,很大程度上,干法刻蚀的水平决定了整个产业的水平和规模。在本文中,本课题组使用ICP刻蚀技术刻蚀GaAs材料,在Cl_2/Ar/O_2环境下,研究控制刻蚀气流组成成分,刻蚀气流总速率等不同的刻蚀条件对于GaAs材料刻蚀速率的影响。实验表明,当刻蚀气流的成分不变的情况下,GaAs的刻蚀速率随着总刻蚀气流速率的增加而增加。刻蚀孔径的大小和Cl_2的含量多少也会影响GaAs的刻蚀速率。当O_2的含量在5%左右或者大于5%的实验中,GaAs材料的刻蚀表面的粗糙度几乎没有被刻蚀所影响。同时,给出了实验现象的简要分析和解释。
For more than 30 years since component fabrication began with inductively coupled plasma (ICP) etching technology in 1970, its development is inextricably linked with the development of integrated circuits and optoelectronic devices. To a large extent, the level of dry etching has been determined The level and size of the entire industry. In this paper, the group using etching etching GaAs material ICP, Cl_2 / Ar / O_2 environment, the study to control the composition of the flow of the etching gas, the total flow rate of the etching gas etching conditions for the GaAs material etching Effect of rate. Experiments show that the etching rate of GaAs increases with the increase of the total etching gas flow rate when the composition of the etching gas flow is constant. The size of the etch aperture and the amount of Cl_2 also affect the GaAs etch rate. When the content of O 2 is about 5% or more, the roughness of the etched surface of the GaAs material is hardly affected by the etching. At the same time, a brief analysis and explanation of the experimental phenomena are given.