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本文描述了用简单的电测量方法测定功率晶体管峰值结温的技术。为了确定峰值结温,考虑到器件有源区内校准的和测量的电流分布之间的差异,改变了标准的电测量技术。当温度分布比较均匀时,电测量测定的峰值结温比红外测量值仅低6％或不到6％,但标准电测量技术测定的峰值结温比红外测量值低10％到25％左右。当温度分布不均匀时,器件的有源区只有20％左右处于稳态功耗,这种情况下电测量技术确定的峰值结温比红外测量低11％以下,而标准电测量的结温却比红外测量值低40％以上。在器件的工作条件相同的情况下,分别用标准电测量方法、红外技术和电峰值结温技术确定峰值结温,并与器件制造者给的最大安全工作温度和安全工作极限作互相比较。建议采用电峰值结温技术来获得更为实用的安全工作区极限,并用它来确定功率晶体管标称安全工作极限的可信度。在这项研究中,采用T0-66和T0-3包封器件,这两种器件是采用多种技术(外延基区单扩散和多重扩散)制作的具有外引线和内引线的台面和平面结构的器件。
This article describes techniques for measuring the peak junction temperature of power transistors with a simple electrical measurement method. In order to determine the peak junction temperature, standard electrical measurement techniques have changed in light of the differences between calibrated and measured current distribution in the active area of the device. When the temperature distribution is more uniform, the peak junction temperature of the electrical measurement is only 6% or less than that of the infrared measurement, but the peak junction temperature measured by the standard electrical measurement technique is about 10% to 25% lower than the infrared measurement. When the temperature distribution is not uniform, the active area of the device is only about 20% of the steady-state power consumption. In this case, the peak junction temperature determined by the electrical measurement technique is 11% lower than that of the infrared measurement. However, More than 40% lower than infrared measurements. With the same operating conditions of the device, the peak junction temperature is determined using standard electrical measurement methods, infrared technology and electric peak-to-peak junction temperature, respectively, and compared with the maximum safe operating temperature and safe operating limits given by the device manufacturer. It is recommended to use electrical peak-to-peak junction temperature technology to obtain a more practical safe working area limit and use it to determine the reliability of the nominal safe operating limits of power transistors. In this study, T0-66 and T0-3 encapsulated devices are used, which are mesa and planar structures with outer leads and inner leads fabricated using a variety of techniques (epitaxial base diffusion alone and multiple diffusion) The device.