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首先通过对０．３５μｍ 接触方孔在不同相移掩模情况下硅片表面空间象光强分布的模拟计算，得出不同相移掩模情况下的最优相移参数。在几种相移掩模中，衰减型对提高边缘斜率最为明显，因此我们决定采用衰减型相移掩模。最后编制了相应的实用化软件，该软件能够自动生成各种相移掩模并能够模拟计算不同照明参数、不同掩模、不同数值孔径、不同离焦情况下的空间象分布，以及直接生成制作掩模时的激光直写数据
Firstly, the optimal phase shift parameters under different phase-shift masks are obtained by simulating the light intensity distribution of the surface of the silicon wafer with 0.35μm contact square holes under different phase shift masks. Of the several phase-shift masks, the decaying type is the most obvious for increasing the edge slope, so we decided to use an attenuated phase-shift mask. Finally, the corresponding practical software is compiled. The software can automatically generate a variety of phase-shift mask and can simulate the spatial distribution of different illumination parameters, different masks, different numerical aperture, different defocus conditions, as well as direct production Laser direct write data during mask