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We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well eleetroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI)for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections,which reduces inteal absorption loss. The experimental results show that the threshold current Ith=62 mA,and output power reaches 3.6 roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of -5 V.