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砷化镓 (GaAs)为第二代半导体材料 ,GaAs衬底质量直接影响器件性能。利用JEM 2 0 0 2透射电子显微镜 (TEM)及其主要附件X射线能量散射谱仪 (EDXA) ,对半绝缘砷化镓 (SI GaAs)单晶中微缺陷进行了研究。发现SI GaAs单晶中的微缺陷包含有富镓沉淀、富砷沉淀、砷沉淀、GaAs多晶颗粒和小位错回线等。还分析了微缺陷的形成机制。
Gallium arsenide (GaAs) for the second generation of semiconductor materials, GaAs substrate quality directly affects the device performance. Microdefects in semi-insulating SI GaAs single crystals were investigated using a JEM2022 transmission electron microscope (TEM) and its main attachment X-ray energy dispersive spectrometer (EDXA). It is found that micro-defects in SI GaAs single crystals include gallium arsenide precipitation, arsenic-rich precipitation, arsenic precipitation, GaAs polycrystalline grains and small dislocation loops. Also analyzed the formation mechanism of micro-defects.