论文部分内容阅读
For photovoltaic applications,low-cost SiN_x-coated metallurgical grade silicon(MG-Si) wafers were used as substrates for polycrystalline silicon(poly-Si) thick films deposition at temperatures ranging from 640 to880 ℃ by thermal chemical vapor deposition.X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 ℃.To obtain n-type poly-Si,the as-deposited poly-Si films were annealed at 880 ℃ capped with a phosphosilicate glass.Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements.The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 10~(19) cm~(-3) and 68.1 cm~2 V~(-1) s~(-1),respectively.Highquality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.
For photovoltaic applications, low-cost SiN_x-coated metallurgical grade silicon (MG-Si) wafers were used as substrates for polycrystalline silicon (poly-Si) thick films deposition at temperatures ranging from 640 to 880 ° C by thermal chemical vapor deposition. X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 ° C. To obtain n-type poly-Si, the as-deposited poly-Si films were annealed at 880 ° C capped with a phosphosilicate glass. of the n-type poly-Si thick films were investigated by four-probe and Hall measurements. The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 10 ~ (19) cm ~ 3) and 68.1 cm ~ 2 V -1 s -1, respectively.Highquality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.