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在（１１１）晶向的ｎ型单晶硅片上，用电化学腐蚀的方法成功地制备出多孔硅膜，室温下，在３４４ｎｍ波长的光激发时用肉眼观察到明亮的桔红色荧光（５７７ｎｍ）。研究了ＨＦ浓度，光照强度，电流密度和电化学腐蚀时间对多孔硅膜的发射波长和发光强度的影响。相应的多孔硅量子线度为１．５ｎｍ。
Porous silicon films were successfully prepared on the (111) -oriented n-type monocrystalline silicon wafer by electrochemical etching. Bright, red-orange fluorescence was observed with the naked eye at room temperature under excitation of 344 nm wavelength (577 nm ). The effects of HF concentration, light intensity, current density and electrochemical corrosion time on the emission wavelength and luminescence intensity of porous silicon films were investigated. The corresponding porous silicon quantum linearity is 1.5 nm.