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利用小孔成像原理对中能电子成像仪探头的机械结构进行了设计,为保证探头单元暴露于外辐射带辐射环境12年的总剂量小于5krad,确定其壳体厚度为约3mm的铜,探头的角分辨率为20°;根据带电粒子在硅中的能量损失规律对探测器进行了防质子污染设计,确定了探测器厚度为1000μm,其屏蔽层厚度为10μm等效硅。最后对设计探头的质子污染率进行了计算,结果表明该中能电子成像仪探头的设计满足外辐射带空间中能电子探测的需求,为中能电子成像仪的研制奠定了基础。
The principle of pinhole imaging was used to design the mechanical structure of the detector. To ensure that the total dose of the probe unit exposed to the radiant radiation in the external radiation band for 12 years was less than 5 krad, the thickness of the probe was determined to be about 3 mm The angular resolution of the detector is 20 °. According to the energy loss law of charged particles in silicon, the detector is designed to prevent proton pollution. The detector thickness is 1000μm and the shield thickness is 10μm equivalent silicon. Finally, the proton contamination rate of the design probe was calculated. The results show that the design of the detector can meet the requirement of electron detection in the outer radiation zone, which lays the foundation for the development of Zhongneng Electronic Imager.