市场研究公司ABI Research发布了关于大功率射频有源器件市场的研究。研究显示,随着4~18 GHz氮化(GaN)器件的普遍应用,在微波射频功率半导体器件方面的开销将持续增长。ABI Research预计,微波射频半导体市场规模有望在2019年之前超过3亿美元。点到点通信、卫星通信、各种雷达和新型工业/医疗应用都将从这些大功率GaN器件的应用中获益。“当砷化镓(GaAs)器件目前成为微波射频功率领域的主流的时候,GaN器 Market research firm ABI Research released a study of the high-power RF active devices market. Research shows that the cost of microwave RF power semiconductor devices will continue to grow with the widespread use of 4-18 GHz GaN devices. ABI Research estimates that the microwave radio frequency semiconductor market is expected to exceed 300 million US dollars by 2019. Point-to-point communications, satellite communications, various radars and new industrial / medical applications will all benefit from the use of these high-power GaN devices. ”When gallium arsenide (GaAs) devices currently become the mainstream of microwave RF power field, the GaN device