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本文报导了在ＪＸＡ—３Ａ电子探针上，研制了电子束感生电流装置、电子束消隐装置、可微动低温样品台以及超慢速电子来扫描装置，配置Ｂｏｘｃａｒ平均器。成功地开发了电子束扫描深能级瞬态谱测量系统，它的温度范围为８０—４５０Ｋ，空间分辨率约１０μｍ，测量稳定度为１．５％。对ＧａＡｓ和Ｓｉ中的深能级及其空间分布进行了测量，并与其结构缺陷进行了对比研究。
This article reports on the JXA-3A electron probe, the development of the electron beam induced current device, electron beam blanking device, the sample can be moved at low temperature and ultra-slow electronic scanning device, configuration Boxcar averager. The electron beam scanning deep-level transient spectroscopy system has been successfully developed. It has a temperature range of 80-450K, a spatial resolution of about 10μm and a measurement stability of 1.5%. The deep energy levels and their spatial distribution in GaAs and Si were measured and compared with their structural defects.