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据美刊《微波杂志》报导,日本正在研制一种双极功率晶体管(Power Bipolar Transistor),有可能代替地面站和卫星应答机中用的行波管。在这种阶梯电极晶体管(Stepped Electrode Transistor)中,低结温度使之获得高的可靠性。长期和加速寿命试验表明,其无故障平均工作时间超过10~6小时。NEM4205是该系列的典型管子,采用20伏电源,在4.2千兆赫频率下产生5瓦功率,增益为4分贝,效率为25%。NEM4203,在4.2千兆赫频率下功率达3瓦,增益为5分贝,在50℃环境温度下,结点温度只为120℃。利用7只 NEM4203晶体管研制出一种三级放大器,在4千兆赫卫星频带内给出12瓦功率,功率增益为11～13分贝,带宽为240兆赫。
According to the U.S. magazine Microwave Journal, Japan is developing a Power Bipolar Transistor that may replace the traveling wave tube used in ground stations and satellite transponders. In this Stepped Electrode Transistor, a low junction temperature gives high reliability. Long-term and accelerated life test showed that the average working hours without failure more than 10 to 6 hours. The NEM4205 is a typical tube in this family, with a 20-volt supply, producing 5 watts of power at 4.2 GHz, a gain of 4 dB, and an efficiency of 25%. NEM4203, at 4.2 GHz frequency power of 3 watts, a gain of 5 dB, at 50 ℃ ambient temperature, junction temperature is only 120 ℃. A seven-stage NEM4203 transistor was used to develop a three-stage amplifier with 12 watts of power in a 4 GHz satellite band with a power gain of 11-13 dB and a bandwidth of 240 MHz.